The transistor modules available in Genesys are quite
accurate but also very complicated (sooo many parameters
to fill in). Most of us learned to do transistor DC-circuit
analysis using only the following:
hFE (transistor beta)
Vbe (base emitter saturation voltage)
Vce (collector emitter saturation voltage)
So, it would be nice to have a SIMPLE transistor model
that one could use for DC circuit analysis. In my case,
I would use it to design an active bias circuit for a
FET microwave amplifier.
accurate but also very complicated (sooo many parameters
to fill in). Most of us learned to do transistor DC-circuit
analysis using only the following:
hFE (transistor beta)
Vbe (base emitter saturation voltage)
Vce (collector emitter saturation voltage)
So, it would be nice to have a SIMPLE transistor model
that one could use for DC circuit analysis. In my case,
I would use it to design an active bias circuit for a
FET microwave amplifier.
the GENESYS transistor model list the parameter Vbe, it is not
the Vbe that most of us remember from Circuits-101.
So, GENESYS could really use a DC model for transistors where
one can directly change those old familiar parameters, Vbe, beta, etc.