Hi there,
I am using ICCAP to extract a EEHEMT1 model for the GaN HEMT device we have. But I could not get a good fit model for the device. Could you provide a sample model for a GaN HEMT device? I know EEHEMT1 has been proven to be very successful on GaAs HEMT. But I am not sure this model makes good fit on GaN HEMT device. Thank you for your help
Jack
I am using ICCAP to extract a EEHEMT1 model for the GaN HEMT device we have. But I could not get a good fit model for the device. Could you provide a sample model for a GaN HEMT device? I know EEHEMT1 has been proven to be very successful on GaAs HEMT. But I am not sure this model makes good fit on GaN HEMT device. Thank you for your help
Jack
This is a post possibly others users may wish to respond to. Agilent has not evaluated the use of the EEHEMT1 specifically for GaN technologies.
Other users are welcome to post their opinion and/or experiences to this question.
Another possibility would be to do a websearch on EEHEMT1 & GaN and see if you come up with any hits of published papers or information sites.
NOTE: The options/remedies may also depending on the following questions: is the model 'incapable' of accurately reasonably fitting the data, (possibly unique behavior characteristic of the technology?) or, is it simply that an optimal fit of the parameters has not yet been achieved. In the latter case, you can try setting up additional optimizations and tuning to achieve a better fit. If the case is the prior, you may try considering if the part of the device/technology that is different as compared to what eehemt1 simulates, can be modeled/represented by some sort of subckt around the actual device.