hi
i wanted to do the simulation for GaN device under pulsed rf and pulsed dc condition. would you please help me how sahould i do that? is it possible to guid me how should i do loadpull at this conidtion?! my main problem is how to impelemt and program the pulse condition in the ADS.
Dear Yashar,
If your device's simulation model implements some kind of time dependency (like self-heating), you will need the Circuit Envelope simulator and use a time-domain (voltage) source for your bias circuitry and a pulsed-RF source for your RF signal. On both sources you specify the pulse start and duration. All your simulation results now have both a time and frequency (i.e. harmonic index) dependency. For your load-pull results analysis formulas you need to select a time-point somewhere in the pulse, to remove the time dependency.
If your device's simulation model does not have any time-dependency, you don't need to do a pulsed simulation and get by with CW and Harmonic Balance simulator.
Sincerely,
Herman Westra
Technical Consultant
Keysight EDA