I am working with a technology where a metal layer, intruding into the dielectric is often either A) exactly as thick as the dielectric layer or B) thicker than the dielectric layer, and intrudes into 2 or 3 dielectric layers.
I don't know how to do either of these. For a), I thought simply using intrude would work, but it does not, as the intrude is the same size as the dielectric, which is not allowed. (the intrusion depth must be strictly smaller than the dielectric thickness)
As a result, B also does not work. For B) I was told to try using vias, and mapping the top and bottom metals and then connecting them with vias. However, I don't know how to map multiple operations (in this case two intrudions and one via) to the same mask.