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Why You Need LFNA in TFT Characterization?

Question asked by on Aug 21, 2017

In thin-film transistor (TFT) process development, new material like amorphous InGaZno (a-IGZO) have been widely investigated, because of the excellent carrier mobility and better uniformity compared with poly-Si TFT. Various process recipes have been developed to reduce the interface trap densities to increase the device performance and reliability.


To characterize the interface state density in the gate dielectric, low-flicker-noise characterization method had become a popular tool to show how each process step takes effect on the 1/f behavior. This slide will show you why you will need LFNA in TFT performance and reliability characterization.