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Have the S-parameters looking into the left hand side ever been derrived theoertically, and published? If so, does anyone have a reference?

Clearly such a structure would be relatively easy to make as a calibration standard *IF* the properties could be derrived theoretically. I can imagine it is the sort of structure someone might have thought to solve, and I can imagine it might be possible to arrive at a sollution. I might also postulate it would involve Bessel functions an be non-trivial to derrive.

Even more useful would be the case if the inner was tructated, but supported by a dielectric D, as in

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It would of course be fairly easy evualate the S-parameters numerically with a 3D EM solver such as Agilent's EMPro or Ansys's HFSS, but I wonder if anyone has a theoretical solution to either of these structures?

Dave.

Edited by: drkirkby on Jul 28, 2013 10:48 PM

I ended up using HFSS to compute the S-parameters based on two extremes: one is the largest capacitance (longest center pin, biggest center conductor size, smallest outer conductor size, and one on the smallest capacitance, and chose the mean as the valeus to determine the cal-constants and the deviation to determine the residual source match based on errors in the open.