Hello experts,

I've to simulate the s12 of a transistor model with large signal conditions; like a hot-s-parameter-measurement. I'm currently using the schematic for large signal amplifiers from the examples.

http://edocs.soco.agilent.com/display/ads201101/Large+Signal+Amplifier+Simulations

The problem is my transistor is not yet matched to 50 Ohms and I've to match it with respect to its s12 behavior. So i thought about changing the impedance of the terms with the tuning function to find the desired impedance. But with this it is necessary to re-normalize the calculated s-parameters. To do the math i have to build up a s-matrix with all 4 s-parameters. Is it possible to merge the calculated s-values to a matrix and then do some math with it, like calculating the inverse matrix and multiply with another matrix. I know how to use equations with variables, but i need some vector algebra.

I would be glad to hear from you, thank you in advance

I've to simulate the s12 of a transistor model with large signal conditions; like a hot-s-parameter-measurement. I'm currently using the schematic for large signal amplifiers from the examples.

http://edocs.soco.agilent.com/display/ads201101/Large+Signal+Amplifier+Simulations

The problem is my transistor is not yet matched to 50 Ohms and I've to match it with respect to its s12 behavior. So i thought about changing the impedance of the terms with the tuning function to find the desired impedance. But with this it is necessary to re-normalize the calculated s-parameters. To do the math i have to build up a s-matrix with all 4 s-parameters. Is it possible to merge the calculated s-values to a matrix and then do some math with it, like calculating the inverse matrix and multiply with another matrix. I know how to use equations with variables, but i need some vector algebra.

I would be glad to hear from you, thank you in advance

thanks for your help. I'll have a look at the Tutorial/express_meas_wrk example. It becomes very complex with all the dependent variables out of the measurement for hot s-parameters. I thought about a load pull measurement too, but I need to find a complex matching for source and load of the transistor and while doing the matching i have to look at the s12 behavior of my dut. The load pull or source pull measurement does not provide these informations to me. Moreover, the math for re-normalization is basically not that hard. The problem is to get ADS to calculate with the right values out of the variables, as they are power and frequency dependent.

What I basically need is to show some impedance to the transistor an watch its behavior. Most important values for me are the hot s-parameters. Quite hard to get those.

thanks in advance